august 2011 FDPF045N10A n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDPF045N10A rev. c0 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter ratings units v dss drain to source voltage 100 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c) 67 a - continuous (t c = 100 o c) 47 i dm drain current - pulsed (note 1) 268 a e as single pulsed avalanche energy (note 2) 637 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 43 w - derate above 25 o c 0.29 w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 3.5 o c/w r ja thermal resistance, junction to ambient 62.5 FDPF045N10A n-channel powertrench ? mosfet 100v, 67a, 4.5m features ? r ds(on) = 3.7m ( typ.)@ v gs = 10v, i d = 67a ? fast switching speed ? low gate charge ? high performance trench technology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant description this n-channel mosfet is produced using fairchild semiconductors advance powertrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? dc to dc converters ? synchronous rectification for telecommunication psu ? battery charger ? ac motor drives and uninterruptible power supplies ? off-line ups g s d to-220f (retractable) g s d
FDPF045N10A n-channel powertrench ? mosfet FDPF045N10A rev. c0 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics device marking device package reel size tape width quant ity FDPF045N10A FDPF045N10A to-220f - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 100 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.06 - v/ o c i dss zero gate voltage drain current v ds = 80v, v gs = 0v - - 1 a v ds = 80v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 2.0 - 4.0 v r ds(on) static drain to source on resistance v gs = 10v, i d = 67a - 3.7 4.5 m g fs forward transconductance v ds = 10v, i d = 67a (note 4) - 127 - s c iss input capacitance v ds = 50v, v gs = 0v f = 1mhz - 3961 5270 pf c oss output capacitance - 925 1230 pf c rss reverse transfer capacitance - 34 - pf c oss (er) engry releted output capacitance v ds = 50v, v gs = 0v - 1521 - pf q g(tot) total gate charge at 10v v gs = 10v, v ds = 50v i d = 100a - 57 74 nc q gs gate to source gate charge - 17 - nc q gs2 gate charge threshold to plateau - 8 - nc q gd gate to drain miller charge - 13 - nc t d(on) turn-on delay time v dd = 50v, i d = 100a v gs = 10v, r gen = 4.7 (note 4, 5) - 23 56 ns t r turn-on rise time - 26 62 ns t d(off) turn-off delay time - 50 110 ns t f turn-off fall time - 15 40 ns esr equivalent series resistance (g-s) drain open, f = 1mh z - 1.9 - i s maximum continuous drain to source diode forward curr ent - - 67 a i sm maximum pulsed drain to source diode forward current - - 268 a v sd drain to source diode forward voltage v gs = 0v, i sd = 67a - - 1.3 v t rr reverse recovery time v gs = 0v, v dd = 50v, i sd = 100a di f /dt = 100a/ s (note 4) - 75 - ns q rr reverse recovery charge - 120 - nc notes: 1. repetitive rating: pulse width limited by maximum ju nction temperature 2. l = 3mh, i as = 20.6a, r g = 25 , starting t j = 25 c 3. i sd 100a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, dual cycle 2% 5. essentially independent of operating temperature typ ical characteristics
FDPF045N10A n-channel powertrench ? mosfet FDPF045N10A rev. c0 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transf er characteristics figure 3. on-resistance variation vs. figure 4. bod y diode forward voltage drain current and gate voltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 1 2 3 4 5 6 1 10 100 500 -55 o c 175 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.1 1 2 10 100 500 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 6.5v 6.0v 5.5v 5.0v 0.0 0.3 0.6 0.9 1.2 1.5 1 10 100 500 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 100 200 300 400 3.0 3.5 4.0 4.5 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 0.1 1 10 100 10 100 1000 10000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 10 20 30 40 50 60 0 2 4 6 8 10 *note: i d = 100a v ds = 20v v ds = 50v v ds = 80v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDPF045N10A n-channel powertrench ? mosfet FDPF045N10A rev. c0 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. eoss vs. drain to source voltage -100 -50 0 50 100 150 200 0.90 0.95 1.00 1.05 1.10 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 *notes: 1. v gs = 10v 2. i d = 67a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] 0.1 1 10 100 200 0.001 0.01 0.1 1 10 100 500 100ms 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse dc 25 50 75 100 125 150 175 0 15 30 45 60 75 v gs = 10v i d , drain current [a] t c , case temperature [ o c ] r jc = 3.5 o c/w 0 25 50 75 100 0 1 2 3 4 5 e oss , [ j ] v ds , drain to source voltage [ v ]
FDPF045N10A n-channel powertrench ? mosfet FDPF045N10A rev. c0 www.fairchildsemi.com 5 typical performance characteristics (continued) figu re 12. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 100 0.001 0.01 0.1 1 5 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 3.5 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDPF045N10A n-channel powertrench ? mosfet FDPF045N10A rev. c0 www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & wavef orms
FDPF045N10A n-channel powertrench ? mosfet FDPF045N10A rev. c0 www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDPF045N10A n-channel powertrench ? mosfet FDPF045N10A rev. c0 www.fairchildsemi.com 8 package dimensions dimensions in millimeters to-220f (retractable) * front/back side isolation voltage : ac 2500v
FDPF045N10A n-channel powertrench ? mosfet FDPF045N10A rev. c0 www.fairchildsemi.com 9 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild se miconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trade marks. *trademarks of system general corporation, used un der license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products here in to improve reliability, function, or design. fairchild does no t assume any liability arising out of the applicati on or use of any product or circuit described herein; neither does i t convey any license under its patent rights, nor t he rights of others. these specifications do not expand the terms of fai rchilds worldwide terms and conditions, specifical ly the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or syst ems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the u ser. 2. a critical component in any component of a life s upport, device, or system whose failure to perform can be reasonably e xpected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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